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Beam Lead PIN Diode Technical Data
HPND-4005
Features
* High Breakdown Voltage 120 V Typical * Low Capacitance 0.017 pF Typical * Low Resistance 4.7 Typical * Rugged Construction 4 Grams Minimum Lead Pull * Nitride Passivated
.4 (10) .3 (7) CATHODE
GOLD LEADS S1O2/Si3N4 PASSIVATION 130 (5.1) 110 (4.3) 130 (5.1) 110 (4.3)
110 (4.3) 80 (3.1)
760 (29.9) 640 (25.2)
60 (2.4) 30 (1.2)
Description
The HPND-4005 planar beam lead PIN diode is constructed to offer exceptional lead strength while achieving excellent electrical performance at high frequencies. High beam strength offers users superior assembly yield, while extremely low capacitance allows high isolation to be realized. Nitride passivation and polyimide coating provide reliable device protection.
220 (8.7) 180 (7.1) DIMENSIONS IN m (1/1000 inch)
GLASS SILICON 320 (12.6) 220 (8.7) 280 (11.0) 180 (7.1)
25 MIN (1.0)
Outline 21
Maximum Ratings
Operating Temperature ....................................................... -65C to +175C Storage Temperature ........................................................... -65C to +200C Power Dissipation at TCASE = 25C ................................................. 250 mW (Derate linearly to zero at 175C.) Minimum Lead Strength ................................... 4 grams pull on either lead Diode Mounting Temperature ................................. 220C for 10 sec. max.
Applications
The HPND-4005 beam lead PIN diode is designed for use in stripline or microstrip circuits. Applications include switching, attenuating, phase shifting, limiting, and modulating at microwave frequencies. The
extremely low capacitance of the HPND-4005 makes it ideal for circuits requiring high isolation in a series diode configuration.
2
Electrical Specifications at TA = 25C
Part Number HPND4005 Test Conditions Breakdown Voltage VBR (V) Min. 100 Typ. 120 Series Resistance RS ()[2] Typ. 4.7 Max. 6.5 Capacitance CT (pF)[1,2] Typ. 0.017 Max. 0.02 Forward Voltage VF (V) Max. 1.0 IF = 20 mA Reverse Current IR (nA) Max. 100 VR = 30 V Minority Carrier Lifetime (ns)[2] Min. 50 Typ. 100
IR = 10 mA
IF = 20 mA IF = 100 MHz
VR = 10 V f = 10 GHz
IF = 10 mA IR = 6 mA
Notes: 1. Total capacitance calculated from measured isolation value in a series configuration. 2. Test performed on packaged samples.
Typical Parameters
100
IF - FORWARD CURRENT (mA)
10,000
40
ISOLATION AT: -30V -10V
RF RESISTANCE (OHMS)
10
1000
ISOLATION (dB)
30
1
100
20
INSERTION LOSS AT: 10 mA 20 mA
1
0.1
10
0.01 0.25
0.50
0.75
1.00
1.25
1 0.01
10 0.1 1 10 100 1
50 mA
10 FREQUENCY (GHz)
18
0
VF - FORWARD VOLTAGE (V)
IF - FORWARD BIAS CURRENT (mA)
Figure 1. Typical Forward Conduction Characteristics.
Figure 2. Typical RF Resistance vs. Forward Bias Current.
Figure 3. Typical Isolation and Insertion Loss in the Series Configuration (ZO = 50 ).
0.08
CAPACITANCE (PF)
0.06
0.04
0.02
0
0
10
20
30
REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance at 10 GHz vs. Reverse Bias.
INSERTION LOSS (dB)
3
Bonding and Handling Procedures for Beam Lead Diodes
1. Storage Under normal circumstances, storage of beam lead diodes in Agilent-supplied waffle/gel packs is sufficient. In particularly dusty or chemically hazardous environments, storage in an inert atmosphere desiccator is advised. 2. Handling In order to avoid damage to beam lead devices, particular care must be exercised during inspection, testing, and assembly. Although the beam lead diode is designed to have exceptional lead strength, its small size and delicate nature requires that special handling techniques be observed so that the devices will not be mechanically or electrically damaged. A vacuum pickup is recommended for picking up beam lead devices, particularly larger ones, e.g., quads. Care must be exercised to assure that the vacuum opening of the needle is sufficiently small to avoid passage of the device through the opening. A #27 tip is recommended for picking up single beam lead devices. A 20X magnification is needed for precise positioning of the tip on the device. Where a vacuum pickup is not used, a sharpened wooden Q-tip dipped in isopropyl alcohol is very commonly used to handle beam lead devices. 3. Cleaning For organic contamination use a warm rinse of trichloroethane, or its locally approved equivalent, followed by a cold rinse in acetone and methanol. Dry under
infrared heat lamp for 5-10 minutes on clean filter paper. Freon degreaser, or its locally approved equivalent, may replace trichloroethane for light organic contamination. * Ultrasonic cleaning is not recommended. * Acid solvents should not be used. 4. Bonding Thermocompression: See Application Note 979 "The Handling and Bonding of Beam Lead Devices Made Easy". This method is good for hard substrates only. Wobble: This method picks up the device, places it on the substrate and forms a thermocompression bond all in one operation. This is described in the latest version of MIL-STD-883, Method 2017, and is intended for hard substrates only. Resistance Welding or Parallel-GAP Welding: To make welding on soft substrates easier, a low pressure welding head is recommended. Suitable equipment is available from HUGHES, Industrial Products Division in Carlsbad, CA. Epoxy: With solvent free, low resistivity epoxies (available from ABLESTIK and improvements in dispensing equipment, the quality of epoxy bonds is sufficient for many applications. 5. Lead Stress In the process of bonding a beam lead diode, a certain amount of "bugging" occurs. The term bugging refers to the chip lifting
away from the substrate during the bonding process due to the deformation of the beam by the bonding tool. This effect is beneficial as it provides stress relief for the diode during thermal cycling of the substrate. The coefficient of expansion of some substrate materials, specifically soft substrates, is such that some bugging is essential if the circuit is to be operated over wide temperature extremes. Thick metal clad ground planes restrict the thermal expansion of the dielectric substrates in the X-Y axis. The expansion of the dielectric will then be mainly in the Z axis, which does not affect the beam lead device. An alternate solution to the problem of dielectric ground plane expansion is to heat the substrate to the maximum required operating temperature during the beam lead attachment. Thus, the substrate is at maximum expansion when the device is bonded. Subsequent cooling of the substrate will cause bugging, similar to bugging in thermocompression bonding or epoxy bonding. Other methods of bugging are preforming the leads during assembly or prestressing the substrate.
www.semiconductor.agilent.com Data subject to change. Copyright (c) 1999 Agilent Technologies Obsoletes 5954-2226 5965-8877E (11/99)

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